The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jun. 27, 2012
Po-yao KE, Dashe Township, TW;
Tao-wen Chung, Zhubei, TW;
Shine Chung, San Jose, CA (US);
Fu-lung Hsueh, Cranbury, NJ (US);
Po-Yao Ke, Dashe Township, TW;
Tao-Wen Chung, Zhubei, TW;
Shine Chung, San Jose, CA (US);
Fu-Lung Hsueh, Cranbury, NJ (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device is provided. The method includes forming a first fin above a substrate, forming a first emitter region in a first portion of the first fin, forming a first collector region in a second portion of the first fin, and forming a first base region in a third portion of the first fin. The third portion of the first fin is disposed underneath a first gate electrode. The method further includes forming a second fin adjacent to the first fin and above the substrate. The second fin is composed of a semiconductor material. The method also includes forming a first base contact over the second fin. The first base contact is coupled to the first base region through the second fin, the substrate, and the first fin.