The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Jun. 25, 2011
Akira Fujimura, Saratoga, CA (US);
Ingo Bork, Mountain View, CA (US);
Akira Fujimura, Saratoga, CA (US);
Ingo Bork, Mountain View, CA (US);
D2S, Inc., San Jose, CA (US);
Abstract
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (β). At least some shots in the plurality of shots overlap other shots. In some embodiments, βis reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to βexpands the process window for the charged particle beam lithography process.