The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Aug. 17, 2011
Yasuhiko Kojima, Nirasaki, JP;
Kenji Hiwa, Nirasaki, JP;
Yasuhiko Kojima, Nirasaki, JP;
Kenji Hiwa, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber, and a film-forming source material in a vapor state is introduced into the chamber. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamberis controlled to a pressure at which the desorption and diffusion of Cu(hfac)adsorbed on the surface of the CVD Ru film proceed.