The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jun. 27, 2012
Ching-shun Yang, Hsin-Chu, TW;
Chih Ming Yang, Hsin-Chu, TW;
Wei-yi HU, Hsin-Chu, TW;
Yi-kan Cheng, Taipei, TW;
Ching-Shun Yang, Hsin-Chu, TW;
Chih Ming Yang, Hsin-Chu, TW;
Wei-Yi Hu, Hsin-Chu, TW;
Yi-Kan Cheng, Taipei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
Among other things, one or more techniques and/or systems are provided for modeling a discrete device as a macro device. That is, the discrete device can comprise one or more parasitic elements, such as parasitic resistances and/or capacitances. Because values of the parasitic elements are unknown during pre-simulation of the discrete device, the discrete device can be modeled as a macro device, which can be used during pre-simulation to take into account the parasitic elements. For example, specified parameters, such as channel length, can be used to obtain a set of RC values that specify predicted values for the one or more parasitic elements of the discrete device. The discrete device can be modeled as the macro device using the set of RC values. In this way, the macro device can be used during pre-simulation to take into account the parasitic effects of parasitic elements of the discrete device.