The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 31, 2012
Roy E Scheuerlein, Cupertino, CA (US);
Henry Chien, San Jose, CA (US);
Zhida Lan, San Jose, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
Roy E Scheuerlein, Cupertino, CA (US);
Henry Chien, San Jose, CA (US);
Zhida Lan, San Jose, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A re-writable resistance-switching memory cell includes first and second capacitors in series. The first and second capacitors may have balanced electrical characteristics to allow nearly concurrent, same-direction switching. The first capacitor has a first bipolar resistance switching layer between first and second conductive layers, and the second capacitor has a second bipolar resistance switching layer between third and fourth conductive layers. The first and third conductive layers are made of a common material, and the second and fourth conductive layers are made of a common material. In one approach, the first and second bipolar resistance switching layers are made of a common material and have common thickness. In another approach, the first and second bipolar resistance switching layers are made of materials having different dielectric constants, but their thickness differs in proportion to the difference in the dielectric constants, to provide a common capacitance per unit area.