The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Mar. 16, 2007
Applicants:
Ming-chi Fan, Hsinchu County, TW;
Yi-lii Huang, Hsinchu, TW;
Inventors:
Ming-Chi Fan, Hsinchu County, TW;
Yi-Lii Huang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01);
U.S. Cl.
CPC ...
Abstract
Methods and systems for forming a photodiode in a substrate, forming a source/drain region in the substrate and extending over at least a portion of the photodiode, and growing a thermal oxide layer over the photodiode by performing a rapid thermal anneal (RTA) process utilizing an oxidizing environment.