The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Sep. 01, 2011
Applicants:
John J. Hautala, Beverly, MA (US);
Michael Graf, Belmont, MA (US);
Inventors:
John J. Hautala, Beverly, MA (US);
Michael Graf, Belmont, MA (US);
Assignee:
TEL Epion Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.
Hautala, John. (2014). Gas cluster ion beam etch profile control using beam divergence (U.S. Patent No. 8691700). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8691700
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile