The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Nov. 30, 2012
Globalfoundries Inc., Grand Cayman, KY;
Paul R. Besser, Sunnyvale, CA (US);
Sean X. Lin, Watervliet, NY (US);
Valli Arunachalam, Pleasant Valley, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods for fabricating integrated circuits having low resistance device contacts are provided. One method includes depositing an ILD layer of insulating material overlying a device region that includes a metal silicide region. The ILD layer is etched to form a sidewall that defines a contact opening formed through the ILD layer exposing the metal silicide region. A liner is formed overlying the sidewall and the metal silicide region and defines an inner cavity in the contact opening. A copper layer is formed overlying the liner and at least partially filling the inner cavity. The copper layer is etched to expose an upper portion of the liner while leaving a copper portion disposed in a bottom portion of the inner cavity. Copper is electrolessly deposited on the copper portion to fill a remaining portion of the inner cavity.