The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2014

Filed:

May. 25, 2011
Applicants:

Hak-lay Chuang, Hsinchu, TW;

Ming Zhu, Singapore, SG;

Lee-wee Teo, Singapore, SG;

Bao-ru Young, Zhubei, TW;

Inventors:

Hak-Lay Chuang, Hsinchu, TW;

Ming Zhu, Singapore, SG;

Lee-Wee Teo, Singapore, SG;

Bao-Ru Young, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes forming a first isolation feature of a first width and a second isolation feature of a second width in a substrate, the first width being substantially greater than the second width; forming an implantation mask on the substrate, wherein the implantation mask covers the first isolation feature and exposes the second isolation feature; performing an ion implantation process to the substrate using the implantation mask; and thereafter performing an etching process to the substrate.


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