The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Nov. 18, 2010
Satoshi Oka, Annaka, JP;
Hiroji Aga, Annaka, JP;
Masahiro Kato, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Satoshi Oka, Annaka, JP;
Hiroji Aga, Annaka, JP;
Masahiro Kato, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.