The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Oct. 26, 2011
Ching-pin Hsu, Tainan, TW;
Yi-po Lin, Tainan, TW;
Jiunn-hsiung Liao, Tainan, TW;
Chieh-te Chen, Kaohsiung, TW;
Feng-yi Chang, Chiayi County, TW;
Shang-yuan Tsai, Kaohsiung, TW;
Li-chiang Chen, Tainan, TW;
Ching-Pin Hsu, Tainan, TW;
Yi-Po Lin, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Feng-Yi Chang, Chiayi County, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
Li-Chiang Chen, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching step is performed to totally remove the photoresist so that the remaining second stressed layer forms at least one protrusion adjacent to the recess. Then, a trimming photoresist is formed without exposure to fill the recess and to cover the protrusion. Later, a trimming etching step is performed to eliminate the protrusion and to collaterally remove the trimming photoresist.