The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Dec. 08, 2011
Michal Danek, Cupertino, CA (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Nerissa Draeger, Fremont, CA (US);
Lakshminarayana Nittala, Sunnyvale, CA (US);
Michal Danek, Cupertino, CA (US);
Bart van Schravendijk, Sunnyvale, CA (US);
Nerissa Draeger, Fremont, CA (US);
Lakshminarayana Nittala, Sunnyvale, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Provided herein are novel pre-metal dielectric (PMD) integration schemes. According to various embodiments, the methods involve depositing flowable dielectric material to fill trenches or other gaps between gate structures in a front end of line (FEOL) fabrication process. The flowable dielectric material may be partially densified to form dual density filled gaps having a low density region capped by a high density region. In certain embodiments, the methods include further treating at least a portion of the gap fill material after subsequent process operations such as chemical mechanical planarization (CMP) or contact etching.