The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 10, 2012
Jeong-ju Park, Gyeonggi-do, KR;
Kyoung-mi Kim, Gyeonggi-do, KR;
Min-jung Kim, Gyeonggi-do, KR;
Dong-jun Lee, Seoul, KR;
Boo-deuk Kim, Gyeonggi-do, KR;
Jeong-ju Park, Gyeonggi-do, KR;
Kyoung-mi Kim, Gyeonggi-do, KR;
Min-jung Kim, Gyeonggi-do, KR;
Dong-jun Lee, Seoul, KR;
Boo-deuk Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.