The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Aug. 07, 2009
Go-un Kim, Uiwang-si, KR;
Hyo-san Lee, Suwon-si, KR;
Myung-kook Park, Uiwang-si, KR;
Ho-seok Yang, Uiwang-si, KR;
Jeong-nam Han, Seoul, KR;
Chang-ki Hong, Seongnam-si, KR;
Go-Un Kim, Uiwang-si, KR;
Hyo-San Lee, Suwon-si, KR;
Myung-Kook Park, Uiwang-si, KR;
Ho-Seok Yang, Uiwang-si, KR;
Jeong-Nam Han, Seoul, KR;
Chang-Ki Hong, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.