The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Oct. 12, 2010
Juergen Schwandner, Garching, DE;
Thomas Buschhardt, Burghausen, DE;
Diego Feijoo, Bughausen, DE;
Michael Kerstan, Burghausen, DE;
Georg Pietsch, Burghausen, DE;
Guenter Schwab, Neuoetting, DE;
Juergen Schwandner, Garching, DE;
Thomas Buschhardt, Burghausen, DE;
Diego Feijoo, Bughausen, DE;
Michael Kerstan, Burghausen, DE;
Georg Pietsch, Burghausen, DE;
Guenter Schwab, Neuoetting, DE;
Siltronic AG, Munich, DE;
Abstract
A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.