The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Feb. 06, 2012
Sunfei Fang, LaGrangeville, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Byeong Y. Kim, LaGrangeville, NY (US);
Rishikesh Krishnan, Poughkeepsie, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Byeong Y. Kim, LaGrangeville, NY (US);
Rishikesh Krishnan, Poughkeepsie, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for formation of a shallow trench isolation (STI) in an active region of a device comprising trench capacitive elements, the trench capacitive elements comprising a metal plate and a high-k dielectric includes etching a STI trench in the active region of the device, wherein the STI trench is directly adjacent to at least one of the metal plate or high-k dielectric of the trench capacitive elements; and forming an oxide liner in the STI trench, wherein the oxide liner is formed selectively to the metal plate or high-k dielectric, wherein forming the oxide liner is performed at a temperature of about 600° C. or less.