The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8679706 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 25, 2014

Filed:

Jul. 30, 2012
Applicant:

Chang Ju Choi, Fremont, CA (US);

Inventor:

Chang Ju Choi, Fremont, CA (US);

Assignee:

Intel corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/50 (2012.01);
U.S. Cl.
CPC ...
Abstract

Techniques are disclosed for enhancing critical dimension (CD) resolution in photomask processing. In some cases, the techniques can be implemented, for instance, to enhance space and line pattern resolution independently on a given phase-shifting photomask (PSM). The disclosed techniques can be implemented, for example, to extend existing photolithography techniques/technologies (e.g., 193 nm photolithography) to additional process nodes. For instance, some embodiments can be used to produce extremely high-resolution photomasks which generate features having sizes in the 10 nm node and beyond. The disclosed techniques can be implemented in the fabrication of a wide range of integrated circuits (ICs) and other devices.


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