The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Oct. 20, 2011
Yung-sung Yen, Hsin-Chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chien-wen Lai, Hsin-Chu, TW;
Cherng-shyan Tsay, Miaoli, TW;
Yung-Sung Yen, Hsin-Chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chien-Wen Lai, Hsin-Chu, TW;
Cherng-Shyan Tsay, Miaoli, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.