The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Sep. 15, 2011
Yoichi Minemura, Yokkaichi, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Takafumi Shimotori, Kawasaki, JP;
Hiroshi Kanno, Yokkaichi, JP;
Natsuki Kikuchi, Mie, JP;
Mitsuru Sato, Kuwana, JP;
Yoichi Minemura, Yokkaichi, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Takafumi Shimotori, Kawasaki, JP;
Hiroshi Kanno, Yokkaichi, JP;
Natsuki Kikuchi, Mie, JP;
Mitsuru Sato, Kuwana, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes: a memory cell array including plural first lines, plural second lines, and plural memory cells each including a variable resistance element; a first decoder connected to at least one ends of the plurality of first lines and configured to select at least one of the first lines; at least one pair of second decoders connected to both ends of the plurality of second lines and configured such that one of the pair of second decoders is selected for selecting the second lines according to a distance between the one of the first lines selected by the first decoder and the both ends of the second lines; and a voltage application circuit configured to apply a certain voltage between the first line and the second line selected by the first decoder and the second decoder.