The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Oct. 27, 2011
Chu-chun Chang, Tainan, TW;
Kuang-hung Huang, Tainan, TW;
Chun-mao Chiou, Chiayi County, TW;
Yi-chung Sheng, Tainan, TW;
Chu-Chun Chang, Tainan, TW;
Kuang-Hung Huang, Tainan, TW;
Chun-Mao Chiou, Chiayi County, TW;
Yi-Chung Sheng, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device, a second semiconductor device, and a first insulating layer covering the first semiconductor device and the second semiconductor device formed thereon, performing an etching process to remove a portion of the first insulating layer to expose a portion of the first semiconductor device and the second semiconductor device, forming a second insulating layer covering the first semiconductor device and the second semiconductor device, performing a first planarization process to remove a portion of the second insulating layer, forming a first gate trench and a second gate trench respectively in the first semiconductor device and the second semiconductor device, and forming a first metal gate and a second metal gate respectively in the first gate trench and the second gate trench.