The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Mar. 27, 2012
Applicants:

Pei-yu Chou, Tainan, TW;

Jiunn-hsiung Liao, Tainan, TW;

Inventors:

Pei-Yu Chou, Tainan, TW;

Jiunn-Hsiung Liao, Tainan, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming openings is provided. First, a substrate with a silicon-containing photo resist layer thereon is provided. Second, a first photo resist pattern is formed on the silicon-containing photo resist layer. Later, a first etching procedure is carried out on the silicon-containing photo resist layer to form a plurality of first openings by using the first photo resist pattern as an etching mask. Next, a second photo resist pattern is formed on the silicon-containing photo resist layer. Then, a second etching procedure is carried out on the silicon-containing photo resist layer to form a plurality of second openings by using the second photo resist pattern as an etching mask.


Find Patent Forward Citations

Chou, Pei-Yu. (2014). Method of forming openings (U.S. Patent No. 8673544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8673544

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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