The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Apr. 17, 2012
Akihito Takano, Nagano-ken, JP;
Masahiro Sunohara, Grenoble, FR;
Hideaki Sakaguchi, Nagano-ken, JP;
Mitsutoshi Higashi, Nagano-ken, JP;
Kenichi Ota, Taito-ku, JP;
Yuichi Sasajima, Taito-ku, JP;
Akihito Takano, Nagano-ken, JP;
Masahiro Sunohara, Grenoble, FR;
Hideaki Sakaguchi, Nagano-ken, JP;
Mitsutoshi Higashi, Nagano-ken, JP;
Kenichi Ota, Taito-ku, JP;
Yuichi Sasajima, Taito-ku, JP;
Shinko Electric Industries Co., Ltd., Nagano-ken, JP;
Taiyo Yuden Co., Ltd., Tokyo, JP;
Abstract
A wiring board includes a silicon substrate with a through hole communicating with first and second substrate surfaces. A capacitor includes a capacitor part mounted on an insulating film covering the substrate first surface and including a first electrode on the insulating film, a first dielectric layer on the first electrode, and a second electrode on the first dielectric layer. A multilayer structure arranged on a wall surface defining the through hole includes the insulating film on the through hole wall surface, a first metal layer on the insulating film formed from the same material as the first electrode, a second dielectric layer on the first metal layer formed from the same material as the first dielectric layer, and a second metal layer on the second dielectric layer formed from the same material as the second electrode. The multilayer structure covers a penetration electrode in the through hole.