The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Nov. 04, 2010
Applicants:
Tien-chang Chang, Hsinchu, TW;
Jing-hao Chen, Singapore, SG;
Ming-tzong Yang, Hsinchu County, TW;
Inventors:
Assignee:
Mediatek Inc., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device structure includes a substrate having a transistor thereon; a multi-layer contact etching stop layer (CESL) structure covering the transistor, the multi-layer CESL structure comprising a first CESL and a second CESL; and a dielectric layer on the second CESL. The first CESL is made of a material different from that of the second CESL, and the second CESL is made of a material different from that of the dielectric layer.