The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Mar. 14, 2012
Mitsuru Sato, Mie-ken, JP;
Megumi Ishiduki, Mie-ken, JP;
Masaru Kidoh, Tokyo, JP;
Atsushi Konno, Mie-ken, JP;
Yoshihiro Akutsu, Mie-ken, JP;
Masaru Kito, Mie-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
Ryota Katsumata, Mie-ken, JP;
Mitsuru Sato, Mie-ken, JP;
Megumi Ishiduki, Mie-ken, JP;
Masaru Kidoh, Tokyo, JP;
Atsushi Konno, Mie-ken, JP;
Yoshihiro Akutsu, Mie-ken, JP;
Masaru Kito, Mie-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
Ryota Katsumata, Mie-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.