The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jun. 30, 2008
Gowri Kota, Fremont, CA (US);
Frank Y. Lin, Fremont, CA (US);
Qinghua Zhong, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A semiconductor device may be formed by the method comprising providing a patterned photoresist mask over the etch layer, the photoresist mask having at least one photoresist line having a pair of sidewalls ending at a line end, placing a coating over the at least one photoresist line comprising at least one cycle, wherein each cycle comprises: a) depositing a polymer layer over the photoresist line, wherein an amount of polymer at the line end is greater than an amount of polymer on the sidewalls, and b) hardening the polymer layer, and etching features into the etch layer through the photoresist mask, wherein a line end shortening (LES) is less than or equal to 1.