The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Dec. 28, 2011
Applicant:

Mickael Gros-jean, Grenoble, FR;

Inventor:

Mickael Gros-Jean, Grenoble, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.

Published as:
US2012170170A1; FR2970110A1; FR2970110B1; US2014021586A1; US8667654B2; US9525019B2;

Find Patent Forward Citations

Gros-Jean, Mickael. (2014). Method for manufacturing a polycrystalline dielectric layer (U.S. Patent No. 8667654). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8667654

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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