The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Sep. 25, 2013
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventor:
Mickael Gros-Jean, Grenoble, FR;
Assignee:
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01); H01G 4/20 (2006.01); H01L 49/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01G 4/08 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45542 (2013.01); H01G 4/085 (2013.01); H01G 4/1209 (2013.01); H01G 4/33 (2013.01); H01L 21/0228 (2013.01); H01L 21/02189 (2013.01); H01L 21/02274 (2013.01); Y10T 29/42 (2015.01); Y10T 29/43 (2015.01); Y10T 29/435 (2015.01);
Abstract
A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.