The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Apr. 16, 2012
Sundeep Nand Nangalia, Raleigh, NC (US);
Richard Raymond Green, Durham, NC (US);
Dean Alan Zehnder, Hillsborough, NC (US);
Robert Lanzone, Chandler, AZ (US);
Sundeep Nand Nangalia, Raleigh, NC (US);
Richard Raymond Green, Durham, NC (US);
Dean Alan Zehnder, Hillsborough, NC (US);
Robert Lanzone, Chandler, AZ (US);
Abstract
A method includes forming a first buildup dielectric layer on a wafer. The wafer includes electronic components delineated from one another by singulation streets. A singulation street exposure light trap layer is formed on the singulation streets. A second buildup dielectric layer is applied and patterned by being selectively exposed to an exposure light. The singulation street exposure light trap layer traps and diffuses the exposure light thus preventing the exposure light from being reflected to the portion of the second buildup dielectric layer above the singulation streets. In this manner, complete removal of the second buildup dielectric layer above the singulation streets is insured.