The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jul. 28, 2011
Applicants:
Jan Hoentschel, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Steven Langdon, Dresdon, DE;
Thilo Scheiper, Dresden, DE;
Inventors:
Jan Hoentschel, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Steven Langdon, Dresdon, DE;
Thilo Scheiper, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
The drain and source regions may at least be partially formed by in situ doped epitaxially grown semiconductor materials for complementary transistors in sophisticated semiconductor devices designed for low power and high performance applications. To this end, cavities may be refilled with in situ doped semiconductor material, which in some illustrative embodiments also provides a desired strain in the channel regions of the complementary transistors.