The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 09, 2010
Applicants:
Carl M. Faulkner, Little Rock, AR (US);
Daniel J. Connelly, San Francisco, CA (US);
Paul A. Clifton, Mountain View, CA (US);
Daniel E. Grupp, Palo Alto, CA (US);
Inventors:
Carl M. Faulkner, Little Rock, AR (US);
Daniel J. Connelly, San Francisco, CA (US);
Paul A. Clifton, Mountain View, CA (US);
Daniel E. Grupp, Palo Alto, CA (US);
Assignee:
Acorn Technologies, Inc., Santa Monica, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal.