The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Dec. 20, 2012
Intermolecular Inc., San Jose, CA (US);
Frederick Carlos Fulgenico, San Jose, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Jinhong Tong, Santa Clara, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Provided are methods for etching resistive switching and electrode layers in resistive random access memory (ReRAM) cells. Both types of layers are etched in the same operation. This approach simplifies processing in comparison to conventional etching, in which each layer is etched individually. The composition of etchants and process conditions are specifically selected to provide robust and effective etching of both types of layers. The two etching rates may be comparable and may be substantially the same, in some embodiments. Plasma etching involving tri-fluoro-methane and oxygen containing etchants may be used on electrode materials, such as titanium nitride, platinum, and ruthenium, and on resistive switching materials, such as oxides of transition metals. For example, a combination of titanium nitride and hafnium oxide may be etched using such processes. In some embodiments, an etched stack includes a third layer, which may function as a current limiter in ReRAM cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile