The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Nov. 17, 2011
Duan-quan Liao, Singapore, SG;
Shih-chieh Hsu, New Taipei, TW;
Yi-kun Chen, Singapore, SG;
Ching-hwa Tey, de Royale, SG;
Duan-Quan Liao, Singapore, SG;
Shih-Chieh Hsu, New Taipei, TW;
Yi-Kun Chen, Singapore, SG;
Ching-Hwa Tey, de Royale, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device comprises steps as follows: A first dummy gate having a first high-k gate insulator layer, a first composite sacrificial layer, and a first dummy gate electrode sequentially stacked on a substrate is firstly provided. The first dummy gate electrode is subsequently removed to expose the first composite sacrificial layer. The first composite sacrificial layer is then removed. Thereafter, a first work function layer is formed on the first high-k gate insulator layer, and a first metal gate electrode is formed on the first work function layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile