The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Feb. 16, 2011
Applicants:

Won-kyung Park, Seoul, KR;

Satoru Yamada, Seoul, KR;

Young Jin Choi, Hwaseong-si, KR;

Kyo-suk Chae, Suwon-si, KR;

Inventors:

Won-Kyung Park, Seoul, KR;

Satoru Yamada, Seoul, KR;

Young Jin Choi, Hwaseong-si, KR;

Kyo-Suk Chae, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate including a memory cell region and a peripheral region and a field pattern including an insulating region disposed on a nitride liner in a trench in the substrate adjacent an active region. The field pattern and the active region extend in parallel through the cell and peripheral regions. The device also includes a transistor in the peripheral region including a source/drain region in the active region. The device further includes an insertion pattern including an elongate conductive region disposed in the substrate and extending along a boundary between the field pattern and the active region in the peripheral region. Fabrication methods are also described.


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