The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Dec. 24, 2010
Applicants:

Seiichiro Kanno, Iwaki, JP;

Hiroyuki Kitsunai, Kasumigaura, JP;

Masaru Matsushima, Hitachinaka, JP;

Inventors:

Seiichiro Kanno, Iwaki, JP;

Hiroyuki Kitsunai, Kasumigaura, JP;

Masaru Matsushima, Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from 'bad' to 'good' is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.


Find Patent Forward Citations

Kanno, Seiichiro. (2014). Scanning electron microscope (U.S. Patent No. 8653459). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8653459

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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