The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jan. 10, 2013
Intermolecular, Inc., San Jose, CA (US);
Sandra Malhotra, Fort Collins, CO (US);
Hanhong Chen, Milpitas, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Edward L. Haywood, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Gerald Richardson, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.