The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Mar. 22, 2012
Roger A. Booth, Jr., Wappingers Falls, NY (US);
Paul Chang, Mahopac, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Chengwen Pei, Danbury, CT (US);
William R. Tonti, Essex Junction, VT (US);
Roger A. Booth, Jr., Wappingers Falls, NY (US);
Paul Chang, Mahopac, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Chengwen Pei, Danbury, CT (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure, including forming a gate structure on a substrate; performing a first angled implantation on a first side of the gate structure to form a first doped region in the substrate, the first doped region partially extends within a channel of the gate structure and the gate structure blocks the first angled implantation from affecting the substrate on a second side of the gate structure; forming sidewall spacers on sidewalls of the gate; and forming a second doped region in the substrate on the second side of the gate, spaced apart from the channel.