The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Apr. 02, 2010
Kiyofumi Sakaguchi, Mobara, JP;
Takao Yonehara, Atsugi, JP;
Nobuo Kawase, Yokohama, JP;
Kenji Nakagawa, Isehara, JP;
Kiyofumi Sakaguchi, Mobara, JP;
Takao Yonehara, Atsugi, JP;
Nobuo Kawase, Yokohama, JP;
Kenji Nakagawa, Isehara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.