The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Aug. 19, 2011
Alfred Grill, White Plains, NY (US);
Thomas Jasper Haigh, Jr., Claverack, NY (US);
Kelly Malone, Newburgh, NY (US);
Son Van Nguyen, Schenectady, NY (US);
Vishnubhai Vitthalbhai Patel, Yorktown Heights, NY (US);
Hosadurga Shobha, Niskayuna, NY (US);
Alfred Grill, White Plains, NY (US);
Thomas Jasper Haigh, Jr., Claverack, NY (US);
Kelly Malone, Newburgh, NY (US);
Son Van Nguyen, Schenectady, NY (US);
Vishnubhai Vitthalbhai Patel, Yorktown Heights, NY (US);
Hosadurga Shobha, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.