The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Feb. 22, 2011
Yung-huei Lee, Danshui, TW;
Chou-jie Tsai, Tainan, TW;
Chia-fang Wu, Tainan, TW;
Jang Jung Lee, Hsinchu, TW;
Wei-cheng Chu, Tainan, TW;
Dong Gui, Hsinchu, TW;
Yung-Huei Lee, Danshui, TW;
Chou-Jie Tsai, Tainan, TW;
Chia-Fang Wu, Tainan, TW;
Jang Jung Lee, Hsinchu, TW;
Wei-Cheng Chu, Tainan, TW;
Dong Gui, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is aB-enriched Boron.