The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Sep. 07, 2012
Yen-hao Shih, Elmsford, NY (US);
Shih-hung Chen, Hsinchu County, TW;
Teng-hao Yeh, Hsinchu, TW;
Chih-wei HU, Miaoli County, TW;
Feng-nien Tsai, New Taipei, TW;
Lo-yueh Lin, Yilan County, TW;
Yen-Hao Shih, Elmsford, NY (US);
Shih-Hung Chen, Hsinchu County, TW;
Teng-Hao Yeh, Hsinchu, TW;
Chih-Wei Hu, Miaoli County, TW;
Feng-Nien Tsai, New Taipei, TW;
Lo-Yueh Lin, Yilan County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method is used with an IC device including a stack of dielectric/conductive layers to form interlayer connectors extending from a surface of the device to the conductive layers. Contact openings are created through a dielectric layer to a first conductive layer. N etch masks, with 2being less than W, 2being greater than or equal to W, have spaced apart open etch regions and mask regions elsewhere. The stack of layers are etched only through W−1 contact openings to create extended contact openings extending to W−1 conductive layers; 2conductive layers are etched for up to half of the contact openings for each etch mask n=1, 2 . . . N. The contact openings are etched with different combinations of the etch masks' open etch regions. Interlayer connectors are formed in the contact openings.