The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Jul. 10, 2010
Applicants:

Xiang Wang, Shangha, CN;

Xing Wei, Shangha, CN;

Miao Zhang, Shangha, CN;

Chenglu Lin, Shangha, CN;

Xi Wang, Shangha, CN;

Inventors:

Xiang Wang, Shangha, CN;

Xing Wei, Shangha, CN;

Miao Zhang, Shangha, CN;

Chenglu Lin, Shangha, CN;

Xi Wang, Shangha, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S); providing a second substrate (S); and bonding the first substrate to the second substrate with a buried insulating layer (S). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.


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