The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Dec. 29, 2010
Chunshan Yin, Singapore, SG;
Palanivel Balasubramaniam, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Elgin Quek, Sinagpore, SG;
Chunshan Yin, Singapore, SG;
Palanivel Balasubramaniam, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Elgin Quek, Sinagpore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A device includes a substrate with a device region on which a transistor is formed. The device region includes active edge regions and an active center region which have different oxidation growth rates. A growth rate modifier (GRM) comprising dopants which modifies oxidation growth rate is employed to produce a gate oxide layer which has a uniform thickness. The GRM may enhance or retard the oxidation growth, depending on the type of dopants used. Fluorine dopants enhance oxidation growth rate while nitrogen dopants retard oxidation growth rate.