The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Dec. 21, 2011
Applicants:

Dimitri Soussan, Grenoble, FR;

Sylvain Majcherczak, St. Pierre D'Allevard, FR;

Inventors:

Dimitri Soussan, Grenoble, FR;

Sylvain Majcherczak, St. Pierre D'Allevard, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 3/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for controlling an output amplification stage comprising first and second complementary SOI-type power MOS transistors, in series between first and second power supply rails, the method including the steps of: connecting the bulk of the first transistor to the first rail when the first transistor is maintained in an off state; connecting the bulk of the second transistor to the second rail when the second transistor is maintained in an off state; and connecting the bulk of each of the transistors to the common node of said transistors, during periods when this transistor switches from an off state to an on state.


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