The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Feb. 08, 2012
Applicant:

Chao-yuan Su, Hsin-Chu, TW;

Inventor:

Chao-Yuan Su, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/52 (2013.01);
Abstract

Integrated circuit structures and methods are provided. According to an embodiment, a circuit structure includes a die and an anisotropic conducting film (ACF). The die comprises a through via, and the through via protrudes from a surface of the die. A cross-sectional area of the through via in the surface of the die is equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die. The ACF adjoins the surface of the die, and the protruding portion of the through via penetrates the ACF.


Find Patent Forward Citations

Su, Chao-Yuan. (2014). Method for packaging semiconductor dies having through-silicon vias (U.S. Patent No. 8629563). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8629563

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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