The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Feb. 09, 2010
Kazuhisa Yamamura, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
Yasuhito Miyazaki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Kazuhisa Yamamura, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
Yasuhito Miyazaki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A semiconductor photodetection element SP has a silicon substratecomprised of a semiconductor of a first conductivity type, having a first principal surfaceand a second principal surfaceopposed to each other, and having a semiconductor layerof a second conductivity type formed on the first principal surfaceside; and charge transfer electrodesprovided on the first principal surfaceand adapted to transfer generated charge. In the silicon substrate, an accumulation layerof the first conductivity type having a higher impurity concentration than the silicon substrateis formed on the second principal surfaceside and an irregular asperityis formed in a region opposed to at least the semiconductor region, in the second principal surface. The region where the irregular asperityis formed in the second principal surfaceof the silicon substrateis optically exposed.