The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Dec. 07, 2011
Hung Jui Chang, Changhua County, TW;
Chih-tsung Lee, Hsinchu, TW;
You-hua Chou, Taipei, TW;
Shiu-ko Jang Jian, Tainan, TW;
Ming-shiou Kuo, Taichung, TW;
Hung Jui Chang, Changhua County, TW;
Chih-Tsung Lee, Hsinchu, TW;
You-Hua Chou, Taipei, TW;
Shiu-Ko Jang Jian, Tainan, TW;
Ming-Shiou Kuo, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.