The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Feb. 21, 2013
Hgst Netherlands B.v., Amsterdam, NL;
He Gao, San Jose, CA (US);
Jeffrey S. Lille, Sunnyvale, CA (US);
Kanaiyalal Chaturdas Patel, Fremont, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A method for sidewall spacer line doubling uses thermal atomic layer deposition (ALD) of a titanium oxide (TiOx) spacer layer. A hardmask layer is deposited on a suitable substrate. A mandrel layer of diamond-like carbon (DLC) is deposited on the hardmask layer and patterned into stripes with tops and sidewalls. A layer of TiOx is deposited, by thermal ALD without the assistance of plasma or ozone, on the tops and sidewalls of the mandrel stripes. Thermal ALD of the TiO, without energy assistance by plasma or ozone, has been found to cause no damage to the DLC mandrel stripes. After removal of the TiOx from the tops of the mandrel stripes and removal of the mandrel stripes, stripes of TiOare left on the hardmask layer and may be used as an etch mask to transfer the pattern into the hardmask layer.