The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Dec. 23, 2010
Yu-fong Huang, Tainan, TW;
Tzung-ting Han, Yilan, TW;
Yu-Fong Huang, Tainan, TW;
Tzung-Ting Han, Yilan, TW;
Macronix International Co., Ltd., Hsin-chu, TW;
Abstract
A method of processing a semiconductor structure may include preparing a vertical channel memory structure for filling of a physical isolation trench formed therein. The physical isolation trench may be formed between active structures adjacent to each other and extending in a first direction. The active structures may have channels adjacent to sides of the active structures that are opposite to sides of the active structures that are adjacent to the physical isolation trench. The method may further include filling the physical isolation trench in connection with application of a multi-dielectric layer (ex. an oxide-nitride-oxide (ONO) layer), a polysilicon liner and/or an oxide film. A corresponding apparatus and method for integrating such a structure with a planar periphery are also provided.