The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Jul. 29, 2011
Applicants:

Hsiang-tai LU, Zhubei, TW;

Chih-hsien Lin, Tai-Chung, TW;

Meng-lin Chung, Taipei, TW;

Inventors:

Hsiang-Tai Lu, Zhubei, TW;

Chih-Hsien Lin, Tai-Chung, TW;

Meng-Lin Chung, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract

A passive interposer apparatus with a shielded through silicon via (TSV) configuration is disclosed. The apparatus includes a p-doped substrate, wherein at least an upper portion of the p-doped substrate is heavily p-doped. An interlayer dielectric layer (ILD) is disposed over the upper portion of the p-doped substrate. A plurality of through silicon vias (TSVs) are formed through the ILD and the p-doped substrate. A plurality of shielding lines disposed between the TSVs electrically couple respective second metal contact pads to the upper portion of the p-doped substrate.


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