The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Dec. 31, 2008
Ta-cheng Lin, Hsin-Chu, TW;
Te-chang Wu, Hsinshu, TW;
Ta-Cheng Lin, Hsin-Chu, TW;
Te-Chang Wu, Hsinshu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first Pdoped region in the N-well region and being connected to an anode; a P-well region in the P-type substrate and bordering upon the N-well region; a first Ndoped region formed in the P-well region and separated from the first Pdoped region by a spacing distance, the first Ndoped region being connected to a cathode; and a gate structure overlying a portion of the P-type substrate between the first Pdoped region and the first Ndoped region.